344 citations · 871 across the 11 of their papers we have counts for
11 papers
Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
Ryan Page, Yongjin Cho, Joseph Casamento +3
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes…
Evolution of superconductivity in ultrathin NbS2
Rusen Yan, Guru Khalsa, Brian T. Schaefer +5
We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its…
MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates
Suresh Vishwanath, Aditya Sundar, Xinyu Liu +17
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic…
High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
SM Islam, Vladimir Protasenko, Kevin Lee +5
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here th…
Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk
D. V. Lebedev, M. M. Kulagina, S. I. Troshkov +13
Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron mi…
MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures
SM Islam, Kevin Lee, Jai Verma +5
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by contro…