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cond-mat.mtrl-sci2019★ 42 cited
Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
Ryan Page, Yongjin Cho, Joseph Casamento +3
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes…
cond-mat.mtrl-sci2017
MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates
Suresh Vishwanath, Aditya Sundar, Xinyu Liu +17
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic…