MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures

Abstract

Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy (PAMBE). Single peaked emission spectra is achieved with narrow full width at half maximum (FWHM) for three different light emitting diodes (LEDs) operating at 232 nm, 246 nm and 270 nm. 232 nm (5.34 eV) is the shortest EL emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced doping.

arXiv comment5 pages, 3 figures

References in corpus (1)

• Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs

Cited by in corpus (10)

• Hole mobility of strained GaN from first principles
• Route to high hole mobility in GaN via reversal of crystal-field splitting
• High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
• 229 nm UV LEDs using p-type silicon for increased hole injection
• Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
• Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells
• Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
• Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources
• Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes
• Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters