activity
20162021
most citedMBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures

116 citations · 195 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2021★ 10 cited

Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs

Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee +8

This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN…

physics.app-ph2019★ 26 cited

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6

Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…

physics.app-ph2018★ 9 cited

Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy

YongJin Cho, Shyam Bharadwaj, Zongyang Hu +4

Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-pol…

physics.app-ph2018★ 34 cited

Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions

Henryk Turski, Shyam Bharadwaj, Huili +2

The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quan…

cond-mat.mtrl-sci2016★ 116 cited

MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures

SM Islam, Kevin Lee, Jai Verma +5

Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by contro…