116 citations · 229 across the 5 of their papers we have counts for
5 papers
Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee +8
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN…
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV -(AlGa)O on m-plane sapphire
Riena Jinno, Celesta S. Chang, Takeyoshi Onuma +9
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semico…
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…
High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
SM Islam, Vladimir Protasenko, Kevin Lee +5
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here th…
MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures
SM Islam, Kevin Lee, Jai Verma +5
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by contro…