Kevin Lee

most citedCrystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV

α

-(AlGa)

_{2}

_{3}

on m-plane sapphire

2 citations · 2 across the 1 of their papers we have counts for

collaborators

2 papers

physics.app-ph2020★ 2 cited

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$ -(AlGa) $_{2}$ O $_{3}$ on m-plane sapphire

Riena Jinno, Celesta S. Chang, Takeyoshi Onuma +9

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semico…

physics.app-ph2019

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6

Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV α-(AlGa)2​O3​ on m-plane sapphire

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$ -(AlGa) $_{2}$ O $_{3}$ on m-plane sapphire