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20162021
most citedMBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures

116 citations · 229 across the 5 of their papers we have counts for

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cond-mat.mes-hall2017★ 75 cited

High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

SM Islam, Vladimir Protasenko, Kevin Lee +5

Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here th…