168 citations · 433 across the 6 of their papers we have counts for
6 papers
Thermal conductivity of crystalline AlN and the influence of atomic-scale defects
Runjie Lily Xu, Miguel Munoz Rojo, S. M. Islam +8
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure t…
Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells
H. Condori Quispe, S. M. Islam, S. Bader +7
We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport…
High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
SM Islam, Vladimir Protasenko, Kevin Lee +5
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here th…
MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures
SM Islam, Kevin Lee, Jai Verma +5
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by contro…
Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes
Jimy Encomendero, Faiza Afroz Faria, S. M. Islam +5
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tun…
Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions
Xiaodong Yan, Wenjun Li, S. M. Islam +4
By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling cur…