344 citations · 871 across the 11 of their papers we have counts for
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High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
SM Islam, Vladimir Protasenko, Kevin Lee +5
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here th…
Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes
Jimy Encomendero, Faiza Afroz Faria, S. M. Islam +5
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tun…
Experimental Demonstration of Single Electron Transistors Featuring SiO2 PEALD in Ni-SiO2-Ni Tunnel Junctions
Golnaz Karbasian, Michael S. McConnell, Alexei O. Orlov +2
We report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultra-thin (~1 nm) tunnel-transparent SiO2 in Ni-SiO2…
High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
Wan Sik Hwang, Amit Verma, Hartwin Peelaers +11
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smal…