344 citations · 871 across the 11 of their papers we have counts for
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cond-mat.mes-hall2015
Experimental Demonstration of Single Electron Transistors Featuring SiO2 PEALD in Ni-SiO2-Ni Tunnel Junctions
Golnaz Karbasian, Michael S. McConnell, Alexei O. Orlov +2
We report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultra-thin (~1 nm) tunnel-transparent SiO2 in Ni-SiO2…
cond-mat.mtrl-sci2015★ 93 cited
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
Priti Gupta, A. A. Rahman, Shruti Subramanian +10
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that…