Delta-doped Beta- Gallium Oxide Field Effect Transistor

Abstract

We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm^2/Vs, integrated sheet charge of 2.4x10^14 cm^-2). A single delta-doped sheet of carriers was employed as a channel to realize a field effect transistor with current ID,MAX =292 mA/mm and transconductance gM = 27 mS/mm.

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References in corpus (3)

• Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide
• Intrinsic Electron Mobility Limits in beta-Ga2O3
• High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm

Cited by in corpus (10)

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• Metal$/BaTi{O}_3/\beta -G{a}_2{O}_3$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
• Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
• Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $\beta$-Ga${}_2$O${}_3$ and $\beta$-(Al${}_x$Ga${}_1-x$)${}_2$ O${}_3$ Films
• Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy
• Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $\beta$-Ga2O3
• \b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70%