169 citations · 709 across the 11 of their papers we have counts for
11 papers
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain +11
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extrem…
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +5
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel…
Delta-doped Beta- Gallium Oxide Field Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj +2
We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures tha…
AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic co…
Phonon lasing as a likely mechanism for density-dependent velocity saturation in GaN transistors
Jacob B. Khurgin, Sanyam Bajaj, Siddharth Rajan
We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons.…
Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance…
Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
Sanyam Bajaj, Omor F. Shoron, Pil Sung Park +7
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements…
Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage
Sanyam Bajaj, Ting-Hsiang Hung, Fatih Akyol +2
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed…
Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride
Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath +3
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interfac…