169 citations · 709 across the 11 of their papers we have counts for
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physics.ins-det2015★ 2 cited
Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance…
cond-mat.mtrl-sci2015★ 89 cited
Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
Sanyam Bajaj, Omor F. Shoron, Pil Sung Park +7
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements…