169 citations · 709 across the 11 of their papers we have counts for
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cond-mat.mes-hall2016★ 98 cited
AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic co…
cond-mat.mes-hall2016★ 30 cited
Phonon lasing as a likely mechanism for density-dependent velocity saturation in GaN transistors
Jacob B. Khurgin, Sanyam Bajaj, Siddharth Rajan
We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons.…