776 citations · 4k across the 57 of their papers we have counts for
57 papers
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Jie Zhou, Ashok Dheenan, Jiarui Gong +13
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…
Demonstration of Multi-Active Region P-down Green LEDs with High Quantum Efficiency
Sheikh Ifatur Rahman, Robert Armitage, Siddharth Rajan
Longer wavelength emitters such as green LEDs display a pronounced efficiency drop at higher current densities, resulting in relatively low wall-plug efficiency. Multi-active regio…
Anisotropic excitonic photocurrent in -GaO
Darpan Verma, Md Mohsinur Rahman Adnan, Sushovan Dhara +3
Polarization dependent photocurrent spectra are measured on a (001) -GaO Schottky photodetector, where the linear polarization of light is rotated within the ab plan…
-GaO Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching
Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan +3
-GaO trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demon…
Simulation of GaN-Based Light Emitting Diodes Incorporating Composition Fluctuation Effects
Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia +3
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last…
Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …