S. Rajan

activity

20102023

most citedRoom Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

776 citations · 4k across the 57 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

33 papers · 1 filter

cond-mat.mtrl-sci2023★ 6 cited

Anisotropic excitonic photocurrent in $β$ -Ga $_{2}$ O $_{3}$

Darpan Verma, Md Mohsinur Rahman Adnan, Sushovan Dhara +3

Polarization dependent photocurrent spectra are measured on a (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky photodetector, where the linear polarization of light is rotated within the ab plan…

cond-mat.mtrl-sci2021

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7

In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$ -Ga2O3. Etching of $β$ …

cond-mat.mtrl-sci2020

All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions

Syed M. N. Hasan, Brendan P. Gunning, Zane J. -Eddine +5

We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and p+-GaN layer thickness and experimentally demonstrate their influence…

cond-mat.mtrl-sci2020★ 21 cited

Spectral measurement of the breakdown limit of $β - G a_{2} O_{3}$ and tunnel ionization of self-trapped excitons and holes

Md M. Adnan, Darpan Verma, Zhanbo Xia +3

$β - G a_{2} O_{3}$ is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wid…

cond-mat.mtrl-sci2020★ 37 cited

Deep-recessed $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors with in situ epitaxial passivation

Chandan Joishi, Zhanbo Xia, John S. Jamison +4

We introduce a deep-recessed gate architecture in $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…

cond-mat.mtrl-sci2019★ 123 cited

Metal $/ B a T i O_{3} / β - G a_{2} O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…

Anisotropic excitonic photocurrent in β-Ga2​O3​

Planar and 3-dimensional damage free etching of β-Ga2O3 using atomic gallium flux

All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions

Spectral measurement of the breakdown limit of β−Ga2​O3​ and tunnel ionization of self-trapped excitons and holes

Deep-recessed β-Ga2​O3​ delta-doped field effect transistors with in situ epitaxial passivation

Metal/BaTiO3​/β−Ga2​O3​ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Anisotropic excitonic photocurrent in $β$ -Ga $_{2}$ O $_{3}$

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Spectral measurement of the breakdown limit of $β - G a_{2} O_{3}$ and tunnel ionization of self-trapped excitons and holes

Deep-recessed $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors with in situ epitaxial passivation

Metal $/ B a T i O_{3} / β - G a_{2} O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field