Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
arXiv:1610.06265 · doi:10.1063/1.4977697
Abstract
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with random in-plane orientation of domains was grown on sapphire and GaN substrates at a substrate temperature of 350-450 C with complete surface coverage and smooth surface morphology. Higher growth temperature (575 C) resulted in the formation of single-crystalline ε-GaSe triangular domains with six-fold symmetry confirmed by in-situ reflection high electron energy diffraction (RHEED) and off-axis x-ray diffraction (XRD). A two-step growth method involving high temperature nucleation of single crystalline domains and low temperature growth to enhance coalescence was adopted to obtain continuous (002)-oriented GaSe with an epitaxial relationship with the substrate. While six-fold symmetry was maintained in the two step growth, β-GaSe phase was observed in addition to the dominant ε-GaSe in cross-sectional scanning transmission electron microscopy images. This work demonstrates the potential of growing high quality 2D-layered materials using molecular beam epitaxy and can be extended to the growth of other transition metal chalcogenides.
arXiv commentChoong Hee Lee and Sriram Krishnamoorthy have contributed equally
References in corpus (12)
- Atomically thin MoS2: A new direct-gap semiconductor
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Valley polarization in MoS2 monolayers by optical pumping
- Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures
- Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
- Structural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy
- Small-signal amplifier based on single-layer MoS2
- Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy
- Molecular-beam epitaxy of monolayer and bilayer WSe2: A scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy
- Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
- High Current Density 2D/3D Esaki Tunnel Diodes
- Layer-Transferred MoS2/GaN PN Diodes
Cited by in corpus (15)
- Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
- Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures
- Solution-processed GaSe nanoflake-based films for photoelectrochemical water splitting and photoelectrochemical-type photodetectors
- Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
- Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
- Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications
- First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure
- Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
- Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates
- Native defects in monolayer GaS and GaSe: electrical properties and thermodynamic stability
- Multi-modal machine learning analysis of GaSe molecular beam epitaxy growth conditions
- Coherent Growth and Characterization of van der Waals 1T-VSe Layers on GaAs(111)B Using Molecular Beam Epitaxy
- Unveiling the growth mode diagram of GaSe on sapphire
- Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling
- Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions