Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices

Abstract

Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology.

arXiv comment16 Pages, 5 figures. Supplementary Information included in the end (+10 pages, +10 Figures, + 2 Tables). Partially presented at 21st ICMBE - September 2021

References in corpus (16)

• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Optimized norm-conserving Vanderbilt pseudopotentials
• The quantum spin Hall effect and topological insulators
• Photocurrent generation with two-dimensional van der Waals semiconductors
• Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures
• Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials
• InSe: a two-dimensional material with strong interlayer coupling
• InSe: a two-dimensional semiconductor with superior flexibility
• Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
• Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
• Wafer-scale fabrication of two-dimensional beta-In2Se3 photodetectors
• Comparative study of structural and electronic properties of GaSe and InSe polytypes
• Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
• First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure
• Structures of bulk hexagonal post-transition-metal chalcogenides from dispersion-corrected density-functional theory
• Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds