68 citations · 154 across the 6 of their papers we have counts for
6 papers
Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
Marcel S. Claro, Juan P. Martínez-Pastor, Alejandro Molina-Sánchez +7
Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range o…
Wafer-scale fabrication of two-dimensional beta-In2Se3 photodetectors
Marcel S. Claro, Justyna Grzonka, Nicoleta Nicoara +2
The epitaxial growth of two-dimensional (2D) material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 n…
Global scaling of the heat transport in fusion plasmas
Sara Moradi, Johan Anderson, Michele Romanelli +2
A global heat flux model based on a fractional derivative of plasma pressure is proposed for the heat transport in fusion plasmas. The degree of the fractional derivative of the he…
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
J. Lemettinen, H. Okumura, I. Kim +4
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high tem…
Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka +8
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nano…
Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array
Jakub Kierdaszuk, Piotr Kaźmierczak, Rafał Bożek +9
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fai…