68 citations · 154 across the 6 of their papers we have counts for
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physics.app-ph2018★ 48 cited
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
J. Lemettinen, H. Okumura, I. Kim +4
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high tem…
cond-mat.mes-hall2018★ 3 cited
Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka +8
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nano…