InSe: a two-dimensional semiconductor with superior flexibility

Abstract

Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young's modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

3 figures, 1 table

References in corpus (10)

• High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
• Elastic properties of freely suspended MoS2 nanosheets
• Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
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• Single-layer MoS2 mechanical resonators
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• Mechanical properties of freely suspended atomically thin dielectric layers of mica
• Revisiting the buckling metrology method to determine the Young's modulus of 2D materials

Cited by in corpus (15)

• The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors
• Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
• InSe Schottky diodes based on van der Waals contacts
• Biaxial versus uniaxial strain tuning of single-layer MoS${}_2$
• Layer-dependent mechanical properties and enhanced plasticity in the van der Waals chromium trihalide magnets
• Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer InSe
• The optical properties of few-layer InSe
• Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
• Thickness identification of thin InSe by optical microscopy methods
• Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
• Integrating van der Waals materials on paper substrates for electrical and optical applications
• Dislocation structure and mobility in the layered semiconductor InSe: A first-principles study
• Structures of bulk hexagonal post-transition-metal chalcogenides from dispersion-corrected density-functional theory
• Terahertz control of photoluminescence emission in few-layer InSe
• Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches