The optical properties of few-layer InSe
arXiv:2008.04691 · doi:10.1063/5.0018480
Abstract
Few-layer InSe draws tremendous research interests owing to the superior electronic and optical properties. It exhibits high carrier mobility up to more than 1000 cm2/Vs at room temperature. The strongly layer-tunable band gap spans a large spectral range from near-infrared to the visible. In this perspective, we systematically review the optical properties of few-layer InSe. Firstly, the intrinsic optical and electronic properties are introduced. Compared to other two-dimensional (2D) materials, the light-matter interaction of few-layer InSe is unusual. The band gap transition is inactive or extremely weak for in-plane polarized light, and the emission light is mainly polarized along the out-of-plane direction. Secondly, we will present several schemes to tune the optical properties of few-layer InSe such as external strain, surface chemical doping and van der Waals (vdW) interfacing. Thirdly, we survey the applications of few-layer InSe in photodetection and heterostructures. Overall, few-layer InSe exhibits great potential not only in fundamental research, but also in electronic and optoelectronic applications.
arXiv commentA review article, 42 pages, 12 figures
References in corpus (63)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Van der Waals heterostructures
- Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
- Black phosphorus field-effect transistors
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- 2D materials and van der Waals heterostructures
- Phosphorene: A New 2D Material with High Carrier Mobility
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- Single-Layer MoS2 Phototransistors
- Ultrafast graphene photodetector
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Graphene photodetectors for high-speed optical communications
- Excitons in atomically thin transition metal dichalcogenides
- Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Measurement of the Optical Conductivity of Graphene
- Moiré Excitons in Van der Waals Heterostructures
- High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
- Manipulating infrared photons using plasmons in transparent graphene superlattices
- Tightly bound excitons in monolayer WSe2
- Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
- Signatures of moiré-trapped valley excitons in MoSe/WSe heterobilayers
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- Elastic properties of freely suspended MoS2 nanosheets
- Probing Excitonic Dark States in Single-layer Tungsten Disulfide
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- The optical conductivity of graphene in the visible region of the spectrum
- Direct Observation of Layer-Dependent Electronic Structure in Phosphorene
- Influence of fake news in Twitter during the 2016 US presidential election
- Strain engineering in semiconducting two-dimensional crystals
- Intrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs
- Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations
- Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers
- Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
- Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures
- Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
- Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
- Determination of layer-dependent exciton binding energies in few-layer black phosphorus
- Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
- Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
- Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model
- Largely tunable band structures of few-layer InSe by uniaxial strain
- Out-of-plane orientation of luminescent excitons in atomically thin indium selenide flakes
- Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
- Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials
- Nano-imaging of intersubband transitions in van der Waals quantum wells
- InSe: a two-dimensional semiconductor with superior flexibility
- Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe
- Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe
- Defects and oxidation resilience in
- Ultra-thin van der Waals crystals as semiconductor quantum wells
- The optical conductivity of few-layer black phosphorus by infrared spectroscopy
- Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
- Drastic enhancement of the Raman intensity in few-layer InSe by uniaxial strain
- Spin-orbit coupling, optical transitions, and spin pumping in mono- and few-layer InSe
- Hybrid -tight-binding model for intersubband optics in atomically thin InSe films