Hybrid $\mathbf{k}\cdot \mathbf{p}$-tight-binding model for intersubband optics in atomically thin InSe films

Abstract

We propose atomic films of n-doped $\gamma$-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the InSe film these transitions span from $\sim 0.7$ eV for bilayer to $\sim 0.05$ eV for 15-layer InSe. We use a hybrid $\mathbf{k}\cdot \mathbf{p}$ theory and tight-binding model, fully parametrized using density functional theory, to predict their oscillator strengths and thermal linewidths at room temperature.

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Cited by in corpus (7)

• Ultra-thin van der Waals crystals as semiconductor quantum wells
• The optical properties of few-layer InSe
• Hybrid k$\cdot$p tight-binding model for subbands and infrared intersubband optics in few-layer films of transition-metal dichalcogenides: MoS${}_2$, MoSe${}_2$, WS${}_2$ and WSe${}_2$
• Tunable spin-orbit coupling in two-dimensional InSe
• Crossover from weakly indirect to direct excitons in atomically thin films of InSe
• Terahertz control of photoluminescence emission in few-layer InSe
• Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches