Tunable spin-orbit coupling in two-dimensional InSe

Abstract

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

References in corpus (30)

• Spintronics: Fundamentals and applications
• New Perspectives for Rashba Spin-Orbit Coupling
• High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
• Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere
• Weak Antilocalization and Spin Precession in Quantum Wells
• Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations
• Model spin-orbit coupling Hamiltonians for graphene systems
• Strong tuning of Rashba spin orbit interaction in single InAs nanowires
• Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
• Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
• Questaal: a package of electronic structure methods based on the linear muffin-tin orbital technique
• Conduction band spin splitting and negative magnetoresistance in ${\mathrm{A}}_3{\mathrm{B}}_5$ heterostructures
• Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model
• Intersubband-induced spin-orbit interaction in quantum wells
• Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
• Weak antilocalization in high-mobility two-dimensional systems
• Rashba and intrinsic spin-orbit interactions in biased bilayer graphene
• Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe
• Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
• Symmetry, distorted bandstructure, and spin-orbit coupling of (group-III) metal-monochalcogenide monolayers
• Ultra-thin van der Waals crystals as semiconductor quantum wells
• Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer InSe
• Spin-orbit coupling and spin relaxation in phosphorene: Intrinsic versus extrinsic effects
• Spin transport in high-mobility graphene on WS${}_2$ substrate with electric-field tunable proximity spin-orbit interaction
• Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization
• Spin-orbit coupling, optical transitions, and spin pumping in mono- and few-layer InSe
• Weak Localization, Spin Relaxation, and Spin-Diffusion: The Crossover Between Weak and Strong Rashba Coupling Limits
• Hybrid $\mathbf{k}\cdot \mathbf{p}$-tight-binding model for intersubband optics in atomically thin InSe films
• Crossover from weakly indirect to direct excitons in atomically thin films of InSe
• Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor

Cited by in corpus (3)

• Coexisting charge density wave and ferromagnetic instabilities in monolayer InSe
• Layer-dependent optically-induced spin polarization in InSe
• Rashba Spin-Orbit Coupling and Nonlocal Correlations in Disordered 2D Systems