1.3k citations · 1.7k across the 12 of their papers we have counts for
12 papers
Dopant-induced modifications of the optical properties of GaSe
Jakub Sójka, Katarzyna Olkowska-Pucko, Kacper Walczyk +5
Doping plays a crucial role in tailoring the electronic, optical, and magnetic properties of semiconductors, enabling control of carrier dynamics and the formation of functional st…
Two-dimensional magnetic tunnel p-n junctions for low-power electronics
Wenkai Zhu, Ziao Wang, Tiangui Hu +13
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin)…
Giant light emission enhancement in strain-engineered InSe/MS (M=Mo,W) van der Waals heterostructures
Elena Blundo, Marzia Cuccu, Federico Tuzi +11
Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlimited possibilities to play with layer number, order and twist angle in vdW heterostru…
Tunable spin-orbit coupling in two-dimensional InSe
A. Ceferino, S. J. Magorrian, V. Zólyomi +7
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer -InSe films can be tuned over a wide range. This tunability is th…
Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
M. Osiekowicz, D. Staszczuk, K. Olkowska-Pucko +9
The temperature effect on the Raman scattering efficiency is investigated in -GaSe and -InSe crystals. We found that varying the temperature over a broad range from…
Photoluminescence dynamics in few-layer InSe
Tommaso Venanzi, Himani Arora, Stephan Winnerl +10
We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thick…
Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors
Quanshan Lv, Faguang Yan, Nobuya Mori +6
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carr…
Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak +14
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into int…
Two-dimensional covalent crystals by chemical conversion of thin van der Waals materials
Vishnu Sreepal, Mehmet Yagmurcukardes, Kalangi S. Vasu +14
Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2…
Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
Yongjin Lee, Riccardo Pisoni, Hiske Overweg +10
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optic…
Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
Matthew Hamer, Endre Tóvári, Mengjian Zhu +13
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron…
High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
D. A. Bandurin, A. V. Tyurnina, G. L. Yu +16
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are…