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Two-dimensional magnetic tunnel p-n junctions for low-power electronics
Wenkai Zhu, Ziao Wang, Tiangui Hu +13
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin)…
Tunable spin-orbit coupling in two-dimensional InSe
A. Ceferino, S. J. Magorrian, V. Zólyomi +7
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer -InSe films can be tuned over a wide range. This tunability is th…
Photoluminescence dynamics in few-layer InSe
Tommaso Venanzi, Himani Arora, Stephan Winnerl +10
We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thick…
Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak +14
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into int…
Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
Yongjin Lee, Riccardo Pisoni, Hiske Overweg +10
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optic…
Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
Matthew Hamer, Endre Tóvári, Mengjian Zhu +13
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron…