1.3k citations · 2.2k across the 25 of their papers we have counts for
25 papers
A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
E. E. Vdovin, M. T. Greenaway, Yu. N. Khanin +9
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagon…
Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure
Anubhab Dey, Nathan Cottam, Oleg Makarovskiy +10
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room…
Terahertz control of photoluminescence emission in few-layer InSe
Tommaso Venanzi, Malte Selig, Alexej Pashkin +11
A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dyn…
Tunable spin-orbit coupling in two-dimensional InSe
A. Ceferino, S. J. Magorrian, V. Zólyomi +7
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer -InSe films can be tuned over a wide range. This tunability is th…
Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
M. Osiekowicz, D. Staszczuk, K. Olkowska-Pucko +9
The temperature effect on the Raman scattering efficiency is investigated in -GaSe and -InSe crystals. We found that varying the temperature over a broad range from…
Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities
Jonathan H. Gosling, Oleg Makarovsky, Feiran Wang +7
Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Her…