Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al
arXiv:1211.3860
Abstract
Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario.
6 pages, 2 figures
References in corpus (4)
- Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
- Achieving High Curie Temperature in (Ga,Mn)As
- Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
- Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As