activity
20032025
most citedVertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

1.8k citations · 2.2k across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2025★ 74 cited

Roadmap for Photonics with 2D Materials

F. Javier García de Abajo, D. N. Basov, Frank H. L. Koppens +145

Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layer…

cond-mat.mes-hall2023★ 6 cited

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

E. E. Vdovin, M. T. Greenaway, Yu. N. Khanin +9

Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagon…

cond-mat.mtrl-sci2020

Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities

Jonathan H. Gosling, Oleg Makarovsky, Feiran Wang +7

Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Her…

cond-mat.mtrl-sci2019★ 61 cited

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

M. Wang, C. Andrews, S. Reimers +20

Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-orde…

cond-mat.mes-hall2018★ 52 cited

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

M. T. Greenaway, E. E. Vdovin, D. Ghazaryan +17

Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised sta…

cond-mat.mes-hall2015★ 101 cited

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

E. E. Vdovin, A. Mishchenko, M. T. Greenaway +12

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages be…