A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Abstract

Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.

References in corpus (8)

• Dielectric function, screening, and plasmons in 2D graphene
• Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
• Strong Coulomb drag and broken symmetry in double-layer graphene
• Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
• Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions
• Spectroscopy of $NbS{e}_2$ using Energy-Tunable Defect-Embedded Quantum Dots
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Cited by in corpus (1)

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