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16 papers
Tunneling characteristics of twisted double bilayer graphene heterostructures
Alexey A. Sokolik, Azat F. Aminov, Evgenii E. Vdovin +5
Electron tunneling between sheets of bilayer Bernal graphene twisted at different small angles was studied experimentally and theoretically. The current-voltage characteristics exh…
Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets
Alexey A. Sokolik, Azat F. Aminov, Evgenii E. Vdovin +6
Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than…
Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier
Dmitry A. Mylnikov, Mikhail A. Kashchenko, Kirill N. Kapralov +7
Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this…
A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
E. E. Vdovin, M. T. Greenaway, Yu. N. Khanin +9
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagon…
Twisted monolayer and bilayer graphene for vertical tunneling transistors
Davit A. Ghazaryan, Abhishek Misra, Evgenii E. Vdovin +5
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron ni…
Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
M. T. Greenaway, E. E. Vdovin, D. Ghazaryan +17
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised sta…