First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure
arXiv:2006.02059 · doi:10.1103/PhysRevB.102.235407
Abstract
The structural stability and electronic states of GaSe monolayer with trigonal-antiprismatic (AP) structure, which is a recently discovered new polymorph, were studied by first-principles calculations. The AP phase GaSe monolayer was found stable, and the differences in energy and lattice constant were small when compared to those calculated for a GaSe monolayer with conventional trigonal-prismatic (P) structure which was found to be the ground state. Moreover, it was revealed that the relative stability of P phase and AP phase GaSe monolayers reverses under tensile strain. These calculation results provide insight into the formation mechanism of AP phase GaSe monolayers in epitaxially-grown GaSe thin films.
arXiv comment17 pages, 3 figures
References in corpus (6)
- Tunable Magnetism and Half-Metallicity in Hole-doped Monolayer GaSe
- Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations
- Chemically-exfoliated single-layer MoS : stability, lattice dynamics and catalytic adsorption from first principles
- Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures
- Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
- Orbital symmetry and the optical response of single-layer monochalcogenides
Cited by in corpus (3)
- Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
- Anisotropic Rashba splitting dominated by out-of-plane spin polarization in two-dimensional Janus (= Si, Sn, Ge; = Sb, Bi) with surface imperfection
- Thermodynamic Favorability of the 1T Phase over the 1H Phase in Group III Metal Monochalcogenide Zigzag Nanoribbons