Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions
arXiv:2010.04657
Abstract
The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals materials is one of the most important requirements to meet the challenging demands implied by the semiconductor industry. This review contributes to a more generalized understanding on the integration of van der Waals materials - and in more specific 2D chalcogenides - through the growth process of epitaxy. This, can pursue further the aspiration of large-area, single-crystalline and defect-free epitaxial integration of (quasi) van der Waals homo- and heterostructures into the great world of the semiconductor industry.
References in corpus (25)
- Electric Field Effect in Atomically Thin Carbon Films
- Van der Waals heterostructures
- 2D materials and van der Waals heterostructures
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
- Large-Area Aiming Synthesis of WSe2 Monolayers
- Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
- Commensurate-incommensurate transition for graphene on hexagonal boron nitride
- Van der Waals heterostructures for high-performance device applications: challenges and opportunities
- Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
- Structural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy
- Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
- Topological superconductivity in monolayer transition metal dichalcogenides
- Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles
- Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films
- Interlayer coupling in commensurate and incommensurate bilayer structures of transition metal dichalcogenides
- Discovery of a new type of topological Weyl fermion semimetal state in MoWTe
- Moir{é} patterns as a probe of interplanar interactions: graphene on h-BN
- Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy
- Spontaneous Strains and Gap in Graphene on Boron Nitride
- Measuring Chern numbers above the Fermi level in the Type II Weyl semimetal MoWTe
- Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
- MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates
- Proximity effects in Graphene and Ferromagnetic CrBr3 van der Waals Heterostructure
- Observation of Interface Superconductivity in a SnSe2-Epitaxial Graphene van der Waals Heterostructure
- Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance