Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy
arXiv:1709.02912 · doi:10.1021/acs.nanolett.7b02420
Abstract
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly-developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics. For two-dimensional (2D) materials, however, main fabrication routes have been mechanical exfoliation and chemical-vapor deposition by making good use of weak van der Waals bonding nature between neighboring layers, and MBE growth of 2D materials, in particular on insulating substrates for transport measurements, has been limited despite its fundamental importance for future advanced research. Here we report layer-by-layer epitaxial growth of scalable transition-metal dichalocogenide (TMDC) thin films on insulating substrates by MBE, and demonstrate ambipolar transistor operation. The proposed growth protocol is broadly applicable to other TMDC, providing a key milestone toward fabrication of van der Waals heterostructures with various 2D materials for novel properties and functionalities.
References in corpus (13)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Two-Dimensional Material Nanophotonics
- Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3
- Characterization of collective ground states in single-layer NbSe2
- High-temperature interface superconductivity between metallic and insulating cuprates
- Observation of intervalley quantum interference in epitaxial monolayer WSe2
Cited by in corpus (18)
- Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides
- NaCl-Assisted Substrate Dependent 2D Planar Nucleated Growth of MoS2
- Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films
- Tailoring Magnetism in Self-intercalated Cr1+δTe2 Epitaxial Films
- Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
- Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth
- Large-area van der Waals epitaxy and magnetic characterization of FeGeTe films on graphene
- Surface-diffusion-limited growth of atomically thin WS2 crystals from core-shell nuclei
- Large-area synthesis of ferromagnetic FeGeTe/graphene van der Waals heterostructures with Curie temperature above room temperature
- Predicting phase preferences of two-dimensional transition metal dichalcogenides using machine learning
- Self-assembled nano-columns in Bi2Se3 grown by molecular beam epitaxy
- Thermal Stability of Hafnium Zirconium Oxide on Transition Metal Dichalcogenides
- Monolayers Grown by Molecular Beam Epitaxy on hBN
- Selenization of VO/WO Bilayers for Tuned Optoelectronic Response of WSe Films
- Photoluminescence efficiency of MBE-grown MoSe monolayers featuring sharp excitonic lines and diverse grain structures
- Growth and crystallographic structure of TiTe on Au(111): From sub-monolayer structures to single- and multi-layer films
- Strain controlled superconductivity in few-layer NbSe2
- Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions