Selenization of V$_2$O$_5$/WO$_3$ Bilayers for Tuned Optoelectronic Response of WSe$_2$ Films

Abhishek Bajgain; Santu Prasad Jana; Alexander Samokhvalov; Thomas Parker; John Derek Demaree; Ramesh C. Budhani

doi:10.1063/5.0282009

paper

Selenization of V $_{2}$ O $_{5}$ /WO $_{3}$ Bilayers for Tuned Optoelectronic Response of WSe $_{2}$ Films

arXiv:2505.22800 · doi:10.1063/5.0282009

Abstract

Scalable and controlled doping of two-dimensional transition metal dichalcogenides is essential for tuning their electronic and optoelectronic properties. In this work, we demonstrate a robust approach for substitution of vanadium in tungsten diselenide (WSe $_{2}$ ) via the selenization of pre-deposited V $_{2}$ O $_{5}$ /WO $_{3}$ thin films. By adjusting the thickness of the vanadium oxide layer, the V concentration in W $_{1 - x}$ V $_{x}$ Se $_{2}$ is systematically varied. Electrical measurements on field-effect transistors reveal a substantial enhancement in hole conduction, with drain current increasing by nearly three orders of magnitude compared to undoped WSe $_{2}$ . Temperature-dependent electrical resistivity indicates a clear insulator-to-metal transition with increasing V content, likely due to band structure modifications. Concurrently, the photoconductive gain decreases, suggesting enhanced recombination and charge screening effects. These results establish vanadium doping via selenization of V $_{2}$ O $_{5}$ /WO $_{3}$ films as a scalable strategy for modulating the transport and photoresponse of WSe $_{2}$ , offering promising implications for wafer-scale optoelectronic device integration.

arXiv comment7 pages,5 figures

Selenization of V2​O5​/WO3​ Bilayers for Tuned Optoelectronic Response of WSe2​ Films

Abstract

References in corpus (9)

Selenization of V $_{2}$ O $_{5}$ /WO $_{3}$ Bilayers for Tuned Optoelectronic Response of WSe $_{2}$ Films