activity
20232025
most citedSelenization of VO/WO Bilayers for Tuned Optoelectronic Response of WSe Films

3 citations · 3 across the 6 of their papers we have counts for

collaborators

7 papers

cond-mat.supr-con2025

Superinsulating behavior in granular Pb film on gated few-layer MoS

Suraina Gupta, Santu Prasad Jana, Pawan Kumar Gupta +1

We report a super-insulating behavior, in a device having granular Pb film on back-gated few-layer , below an onset temperature same as the critical temperature $T_…

cond-mat.mes-hall2025

Selenization of VO/WO Bilayers for Tuned Optoelectronic Response of WSe Films

Abhishek Bajgain, Santu Prasad Jana, Alexander Samokhvalov +3

Scalable and controlled doping of two-dimensional transition metal dichalcogenides is essential for tuning their electronic and optoelectronic properties. In this work, we demonstr…

cond-mat.mes-hall2024

Blocking transition of SrTiO surface dipoles in MoS/SrTiO field effect transistors with counterclockwise hysteresis

Santu Prasad Jana, S Sreesanker, Suraina Gupta +1

A counterclockwise hysteresis is observed at room temperature in the transfer characteristics of SrTiO (STO) gated MoS field effect transistor (FET) and attributed to bista…

cond-mat.mes-hall2024

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS on SiO

Santu Prasad Jana, Suraina Gupta, Anjan Kumar Gupta

Randomly distributed traps at the MoS/SiO interface result in non-ideal transport behavior, including hysteresis in MoS/SiO field effect transistors (FETs). Thus tr…

cond-mat.supr-con2024

Superconductor to metal quantum phase transition with magnetic field in Josephson coupled lead islands on Graphene

Suraina Gupta, Santu Prasad Jana, Rukshana Pervin +1

Superconductor-to-metal transition with magnetic field and gate-voltage is studied in a Josephson junction array comprising of randomly distributed lead islands on exfoliated singl…

cond-mat.mtrl-sci2024

Enhanced performance of MoS/SiO field-effect transistors by hexamethyldisilazane (HMDS) encapsulation

Santu Prasad Jana, Shivangi, Suraina Gupta +1

Scalable methods for improving the performance and stability of a field-effect transistor (FET) based on two-dimensional materials are crucial for its real applications. A scalable…