Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
arXiv:1904.13047 · doi:10.7567/1882-0786/ab176b
Abstract
The key to achieving high-quality van der Waals heterostructure devices made by stacking two-dimensional (2D) layered materials lies in having a clean interface without interfacial bubbles and wrinkles. In this study, the pinpoint pick-up and transfer system of 2D crystals is constructed using polymers with lens shapes. We report the bubble-free and clean-interface assembly of 2D crystals in which unidirectional sweep of the transfer interface precisely controlled with the help of the inclined substrate pushes the bubbles away from the interface.
References in corpus (14)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Boron nitride substrates for high-quality graphene electronics
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Photovoltaic effect in an electrically tunable van der Waals heterojunction
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Characterization of collective ground states in single-layer NbSe2
- The hot pick-up technique for batch assembly of van der Waals heterostructures
- Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
- Ballistic transport exceeding 28 μm in CVD grown graphene
- Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy
- Hydrophobic Ice Confined between Graphene and MoS2
- Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
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- Understanding interface properties in 2D heterostructure FETs
- Reduction of Interlayer Interaction in Multilayer Stacking Graphene with Carbon Nanotube Insertion: Insights from Experiment and Simulation
- Scratching lithography, manipulation, and soldering of 2D materials using microneedle probes