393 citations · 2.1k across the 32 of their papers we have counts for
33 papers
Quantization of mode shifts in nanocavities integrated with atomically thin sheets
N. Fang, D. Yamashita, S. Fujii +5
The unique optical properties of two-dimensional layered materials are attractive for achieving increased functionality in integrated photonics. Owing to the van der Waals nature,…
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage
Taro Sasaki, Keiji Ueno, Takashi Taniguchi +3
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and end…
All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality
Keigo Nakamura, Naoka Nagamura, Keiji Ueno +3
Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at r…
Understanding interface properties in 2D heterostructure FETs
Kosuke Nagashio
Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realize…
Purely in-plane ferroelectricity in monolayer SnS at room temperature
N. Higashitarumizu, H. Kawamoto, C. -J. Lee +7
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several…
Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
N. Fang, S. Toyoda, T. Taniguchi +2
Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFE…
Quantum-mechanical effect in atomically thin MoS2 FET
Nan Fang, Kosuke Nagashio
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics t…
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
Weisheng Li, Jian Zhou, Songhua Cai +21
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-qua…
Influence of interface dipole layers on the performance of graphene field effect transistors
Naoka Nagamura, Hirokazu Fukidome, Kosuke Nagashio +8
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensi…
Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
Satoshi Toyoda, Teerayut Uwanno, Takashi Taniguchi +2
The key to achieving high-quality van der Waals heterostructure devices made by stacking two-dimensional (2D) layered materials lies in having a clean interface without interfacial…
Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
Nan Fang, Kosuke Nagashio
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics.…
Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET
Koki Taniguchi, Nan Fang, Kosuke Nagashio
Understanding interface properties in MoS2 field effect transistors with a high-k gate insulator is critical for improving the performance of the device. Here, by applying the time…
Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
Teerayut Uwanno, Takashi Taniguchi, Kenji Watanabe +1
Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k ga…
Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride / Metal Interface
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here…
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p-WSe Source
Junyang He, Nan Fang, Keigo Nakamura +4
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distan…
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
Nan Fang, Kosuke Nagashio
Although MoS2 field-effect transistors (FETs) with high-k dielectrics are promising for electron device applications, the underlying physical origin of interface degradation remain…
Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement
Y. Hattori, T. Taniguchi, K. Watanabe +1
The electrical evaluation of the crystallinity of hexagonal boron nitride (h-BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as…
Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
Sora Kurabayashi, Kosuke Nagashio
The advantage of MoS2, compared with graphene, is the direct growth on various oxide substrates by chemical vapor deposition (CVD) without utilizing catalytic metal substrates, whi…
Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of el…
Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics
Nan Fang, Kosuke Nagashio, Akira Toriumi
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancie…
Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition
Nobuaki Takahashi, Kosuke Nagashio
The integration of high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to t…
Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Dielectric breakdown has historically been of great interest from the perspectives of fundamental physics and electrical reliability. However, to date, the anisotropy in the dielec…
Gap state analysis in electric-field-induced band gap for bilayer graphene
Kaoru Kanayama, Kosuke Nagashio
The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states.…
Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica
J. L. Qi, K. Nagashio, T. Nishimura +1
A clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001…