393 citations · 2.1k across the 32 of their papers we have counts for
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Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
Nan Fang, Kosuke Nagashio
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics.…
Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET
Koki Taniguchi, Nan Fang, Kosuke Nagashio
Understanding interface properties in MoS2 field effect transistors with a high-k gate insulator is critical for improving the performance of the device. Here, by applying the time…
Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
Teerayut Uwanno, Takashi Taniguchi, Kenji Watanabe +1
Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k ga…
Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride / Metal Interface
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here…
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p-WSe Source
Junyang He, Nan Fang, Keigo Nakamura +4
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distan…
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
Nan Fang, Kosuke Nagashio
Although MoS2 field-effect transistors (FETs) with high-k dielectrics are promising for electron device applications, the underlying physical origin of interface degradation remain…
Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement
Y. Hattori, T. Taniguchi, K. Watanabe +1
The electrical evaluation of the crystallinity of hexagonal boron nitride (h-BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as…