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Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of el…
Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics
Nan Fang, Kosuke Nagashio, Akira Toriumi
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancie…
Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition
Nobuaki Takahashi, Kosuke Nagashio
The integration of high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to t…
Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Dielectric breakdown has historically been of great interest from the perspectives of fundamental physics and electrical reliability. However, to date, the anisotropy in the dielec…