◍wovepaper
SearchResearchersInstitutions
Sign in
researcher

K. Nagashio

17 papers hereh-index 376.2k citations352 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • sole author1
  • middle author2
  • last author14

Across the 17 of 17 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci10
  • physics.app-ph7
same name
  • K. Nagashio — 1 paper, h 0
  • K. Nagashio — 1 paper, h 7

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20172020
most citedPurely in-plane ferroelectricity in monolayer SnS at room temperature

393 citations · 763 across the 11 of their papers we have counts for

collaborators
Showing 2017Show all

1 paper · 1 filter

cond-mat.mtrl-sci2017★ 24 cited

Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition

Sora Kurabayashi, Kosuke Nagashio

The advantage of MoS2, compared with graphene, is the direct growth on various oxide substrates by chemical vapor deposition (CVD) without utilizing catalytic metal substrates, whi…

◍wovepaper

Papers, researchers and institutions, woven together.

Explore
  • Search
  • Researchers
  • Institutions
Account
  • Library
  • Chat
Data
  • arXiv.org
  • Semantic Scholar
  • OpenAlex
  • Latest RSS
AboutContactPrivacyDevelopersllms.txtopenapi.json
Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.