393 citations · 2.1k across the 32 of their papers we have counts for
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Quantum-mechanical effect in atomically thin MoS2 FET
Nan Fang, Kosuke Nagashio
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics t…
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
Weisheng Li, Jian Zhou, Songhua Cai +21
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-qua…
Influence of interface dipole layers on the performance of graphene field effect transistors
Naoka Nagamura, Hirokazu Fukidome, Kosuke Nagashio +8
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensi…
Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
Satoshi Toyoda, Teerayut Uwanno, Takashi Taniguchi +2
The key to achieving high-quality van der Waals heterostructure devices made by stacking two-dimensional (2D) layered materials lies in having a clean interface without interfacial…