393 citations · 763 across the 11 of their papers we have counts for
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Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
N. Fang, S. Toyoda, T. Taniguchi +2
Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFE…
Quantum-mechanical effect in atomically thin MoS2 FET
Nan Fang, Kosuke Nagashio
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics t…
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
Weisheng Li, Jian Zhou, Songhua Cai +21
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-qua…
Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
Satoshi Toyoda, Teerayut Uwanno, Takashi Taniguchi +2
The key to achieving high-quality van der Waals heterostructure devices made by stacking two-dimensional (2D) layered materials lies in having a clean interface without interfacial…
Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET
Koki Taniguchi, Nan Fang, Kosuke Nagashio
Understanding interface properties in MoS2 field effect transistors with a high-k gate insulator is critical for improving the performance of the device. Here, by applying the time…
Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
Teerayut Uwanno, Takashi Taniguchi, Kenji Watanabe +1
Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k ga…