Coherent Growth and Characterization of van der Waals 1T-VSe${}_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy

Abstract

We report epitaxial growth of vanadium diselenide (VSe${}_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe${}_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe${}_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.

14 pages, 4 figures

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Valley polarization in MoS2 monolayers by optical pumping
• Tunable Magnetism and Half-Metallicity in Hole-doped Monolayer GaSe
• Magnetic Transition in Monolayer VSe2 via Interface Hybridization
• Strain Engineering a $4a\times \sqrt{3}a$ Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe${}_2$

Cited by in corpus (1)

• Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth