B. Noesges

most citedChemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

8 citations · 15 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2021★ 1 cited

Experimental determination of the valence band offsets of $Z n G e N_{2}$ and $Z n G e_{0.94} G a_{0.12} N_{2}$ with $G a N$

Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6

A predicted type-II staggered band alignment with an approximately $1.4 e V$ valence band offset at the $Z n G e N_{2} / G a N$ heterointerface has inspired novel band-engineered $III-N/ZnGeN…

cond-mat.mtrl-sci2020★ 8 cited

Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Brenton A. Noesges, Tiancong Zhu, Jacob J. Repicky +5

Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi $_{2}$ Se $_{3}$ ) through proximity effects but also by changing the composition and…

cond-mat.mtrl-sci2020★ 6 cited

Coherent Growth and Characterization of van der Waals 1T-VSe $_{2}$ Layers on GaAs(111)B Using Molecular Beam Epitaxy

Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges +7

We report epitaxial growth of vanadium diselenide (VSe $_{2}$ ) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thick…

Experimental determination of the valence band offsets of ZnGeN2​ and ZnGe0.94​Ga0.12​N2​ with GaN

Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Coherent Growth and Characterization of van der Waals 1T-VSe2​ Layers on GaAs(111)B Using Molecular Beam Epitaxy

Experimental determination of the valence band offsets of $Z n G e N_{2}$ and $Z n G e_{0.94} G a_{0.12} N_{2}$ with $G a N$

Coherent Growth and Characterization of van der Waals 1T-VSe $_{2}$ Layers on GaAs(111)B Using Molecular Beam Epitaxy