activity
20202025
most citedChemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

8 citations · 15 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2025

Metal-organic Pulsed Laser Deposition for Complex Oxide Heterostructures

Jung-Woo Lee, Jieun Kim, Anthony L. Edgeton +21

Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-orga…

cond-mat.mtrl-sci2023

Silicon Implantation and Annealing in -GaO: Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted -GaO is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…

cond-mat.mtrl-sci2021★ 1 cited

Experimental determination of the valence band offsets of and with

Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6

A predicted type-II staggered band alignment with an approximately valence band offset at the heterointerface has inspired novel band-engineered $III-N/ZnGeN…

cond-mat.mtrl-sci2020★ 8 cited

Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Brenton A. Noesges, Tiancong Zhu, Jacob J. Repicky +5

Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (BiSe) through proximity effects but also by changing the composition and…

cond-mat.mtrl-sci2020★ 6 cited

Coherent Growth and Characterization of van der Waals 1T-VSe Layers on GaAs(111)B Using Molecular Beam Epitaxy

Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges +7

We report epitaxial growth of vanadium diselenide (VSe) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thick…