Silicon Implantation and Annealing in $\beta$-Ga${}_2$O${}_3$: Role of Ambient, Temperature, and Time

Abstract

Optimizing thermal anneals of Si-implanted $\beta$-Ga${}_2$O${}_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $\beta$-Ga${}_2$O${}_3$ at concentrations from 5x10${}^{18}$ to 1x10${}^{20}$ cm${}^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm${}^2$/Vs) with contact resistances below 0.29 $\Omega$-mm. Homoepitaxial $\beta$-Ga${}_2$O${}_3$ films, grown by plasma assisted MBE on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5x10${}^{18}$, 5x10${}^{19}$, and 1x10${}^{20}$ cm${}^{-3}$. Anneals were performed in a UHV-compatible quartz furnace at 1 bar with well-controlled gas composition. To maintain $\beta$-Ga${}_2$O${}_3$ stability, $p_{O2}$ must be greater than 10${}^{-9}$ bar. Anneals up to $p_{O2}$ = 1 bar achieve full activation at 5x10${}^{18}$ cm${}^{-3}$, while 5x10${}^{19}$ cm${}^{-3}$ must be annealed with $p_{O2}$ <10${}^{-4}$ bar and 1x10${}^{20}$ cm${}^{-3}$ requires $p_{O2}$ <10${}^{-6}$ bar. Water vapor prevents activation and must be maintained below 10${}^{-8}$ bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperature up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 minutes with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5x10${}^{19}$ cm${}^{-3}$ and occurs rapidly at 1x10${}^{20}$ cm${}^{-3}$. RBS (channeling) suggests damage recovery is seeded from remnant aligned $\beta$-Ga${}_2$O${}_3$ that remains after implantation; this conclusion is also supported by STEM showing retention of the $\beta$-phase with inclusions that resemble the $\gamma$-phase.