3 papers
cond-mat.mtrl-sci2025
Epitaxial Recovery of beta-Ga2O3 after High Dose Implantation
Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +3
As an ultrawide bandgap semiconductor, beta-Ga2O3 has been attractive for its strong tolerance to irradiation damage and high n-type conductivity through ion implantation. Homoepit…
physics.app-ph2025
Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2
Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6
This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…
cond-mat.mtrl-sci2025
Limitations on Activation of High Dose Ge implant in beta-Ga2O3
Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +6
Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are req…