C. Gorsak

activity

20222026

collaborators

8 papers

physics.app-ph2026

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$

Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7

In this work, we demonstrate submicron-gate $β - G a_{2} O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…

cond-mat.mtrl-sci2025

Epitaxial Recovery of beta-Ga2O3 after High Dose Implantation

Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +3

As an ultrawide bandgap semiconductor, beta-Ga2O3 has been attractive for its strong tolerance to irradiation damage and high n-type conductivity through ion implantation. Homoepit…

physics.app-ph2025

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6

This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…

cond-mat.mtrl-sci2025

Limitations on Activation of High Dose Ge implant in beta-Ga2O3

Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +6

Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are req…

cond-mat.mtrl-sci2024

In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

Cameron A. Gorsak, Henry J. Bowman, Katie R. Gann +9

In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successfu…

physics.app-ph2023

Accumulation and removal of Si impurities on $β - G a_{2} O_{3}$ arising from ambient air exposure

J. P. McCandless, C. A. Gorsak, V. Protasenko +5

Here we report that the source of Si impurities commonly observed on (010) $β - G a_{2} O_{3}$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment…

cond-mat.mtrl-sci2023

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted $β$ -Ga $_{2}$ O $_{3}$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…

cond-mat.mtrl-sci2022

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$ -Ga $_{2}$ O $_{3}$ at a growth rate of ~1 $μ$ m/h with control of the silicon doping concentration from 5x10 $^{16}$ …

Sub-Micron Gate β−Ga2​O3​ FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 109