2 papers
physics.app-ph2023
Accumulation and removal of Si impurities on arising from ambient air exposure
J. P. McCandless, C. A. Gorsak, V. Protasenko +5
Here we report that the source of Si impurities commonly observed on (010) is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment…
cond-mat.mtrl-sci2023
Silicon Implantation and Annealing in -GaO: Role of Ambient, Temperature, and Time
K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9
Optimizing thermal anneals of Si-implanted -GaO is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…