Silicon Implantation and Annealing in $\beta$-Ga${}_2$O${}_3$: Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted $\beta$-Ga${}_2$O${}_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…