activity
20192026
most citedAdsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

80 citations · 102 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026

Synthesis of epitaxial TaO thin films on AlO by suboxide molecular-beam epitaxy and thermal laser epitaxy

Yorick A. Birkhölzer, Anna S. Park, Noah Schnitzer +28

Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecul…

cond-mat.mtrl-sci2024

Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films

Lena N. Majer, Tolga Acartürk, Peter A. van Aken +13

Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for…

cond-mat.supr-con2024

alpha-Ta Films on c-plane Sapphire with Enhanced Microstructure

Lena N. Majer, Sander Smink, Wolfgang Braun +7

Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structura…

cond-mat.mtrl-sci2022

Silicon-doped -GaO films grown at 1 m/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow -GaO at a growth rate of ~1 m/h with control of the silicon doping concentration from 5x10…

cond-mat.mtrl-sci2021

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +7

We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy (-MBE). By supplying the molecular catalysts InO and SnO we…

cond-mat.mtrl-sci2020★ 80 cited

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +15

This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per…

cond-mat.mtrl-sci2019★ 22 cited

SrTiO termination control: A method to tailor the oxygen exchange kinetics

Felix V. E. Hensling, Christoph Baeumer, Marc-André Rose +2

We provide insights into the influence of surface termination on the oxygen vacancy incorporation for the perovskite model material SrTiO3 during annealing in reducing gas environm…