3 papers
cond-mat.mtrl-sci2025
Limitations on Activation of High Dose Ge implant in beta-Ga2O3
Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +6
Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are req…
cond-mat.mtrl-sci2023
Silicon Implantation and Annealing in -GaO: Role of Ambient, Temperature, and Time
K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9
Optimizing thermal anneals of Si-implanted -GaO is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…
cond-mat.mtrl-sci2018
Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy
Igor V. Pinchuk, Thaddeus J. Asel, Andrew Franson +6
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though con…