T. Asel

activity

20182025

most cited

γ

-phase Inclusions as Common Defects in Alloyed

β

-(Al

_{x}

_{1 - x}

)

_{2}

_{3}

and Doped

β

-Ga

_{2}

_{3}

Films

45 citations · 50 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2025

Limitations on Activation of High Dose Ge implant in beta-Ga2O3

Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +6

Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are req…

cond-mat.mtrl-sci2023

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted $β$ -Ga $_{2}$ O $_{3}$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…

cond-mat.mtrl-sci2020★ 45 cited

$γ$ -phase Inclusions as Common Defects in Alloyed $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ and Doped $β$ -Ga $_{2}$ O $_{3}$ Films

Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko +5

$β$ -Ga $_{2}$ O $_{3}$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission el…

cond-mat.mtrl-sci2018★ 5 cited

Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy

Igor V. Pinchuk, Thaddeus J. Asel, Andrew Franson +6

Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though con…

Limitations on Activation of High Dose Ge implant in beta-Ga2O3

Silicon Implantation and Annealing in β-Ga2​O3​: Role of Ambient, Temperature, and Time

γ-phase Inclusions as Common Defects in Alloyed β-(Alx​Ga1-x​)2​O3​ and Doped β-Ga2​O3​ Films

Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

$γ$ -phase Inclusions as Common Defects in Alloyed $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ and Doped $β$ -Ga $_{2}$ O $_{3}$ Films